Characterisation of striations in n-type silicon wafer processed with polysilicon contacts-Reference-Cited by-同舟云学术

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Characterisation of striations in n-type silicon wafer processed with polysilicon contacts

Published:2022-12 Issue: Volume:248 Page:111965
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Zhou Zhuangyi^ORCID,Rougieux Fiacre,Siriwardhana Manjula,Coletti Gianluca

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Silicon solar cells: advanced principles & practice;Green,1995

2. Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon;Macdonald;Appl. Phys. Lett.,2004

3. International technology roadmap for photovoltaic;ITPRV,2022

4. On the nature of striations in n-type silicon solar cells;Le Donne;Appl. Phys. Lett.,2016

5. DLTS study of oxygen precipitates in silicon annealed at high pressure;Antonova;Physica B,1996

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Separated striations in n-type Czochralski silicon solar cells;Applied Physics Letters;2024-06-17

2. New method of measuring the permittivity of silicon wafer, with relevance to permittivity-based quality sensing;Materials Chemistry and Physics;2023-04

3. Photovoltaics literature survey (No. 179);Progress in Photovoltaics: Research and Applications;2022-12

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