Reactive ion etch damages in inverted, trilayer thin‐film transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108093
Reference12 articles.
1. Electronic states at the hydrogenated amorphous silicon/silcon nitride interface
2. Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors
3. High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiNx/a-Si Interface
4. Reactive Ion Etching of PECVD n+ a‐Si:H: Plasma Damage to PECVD Silicon Nitride Film and Application to Thin Film Transistor Preparation
5. New thin-film transistor structure and its processing method for liquid-crystal displays
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2. Anomalous Increase in Field-Effect Mobility in In–Ga–Zn–O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer;IEEE Transactions on Electron Devices;2016-07
3. Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence;IEEE Transactions on Device and Materials Reliability;2016-06
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