Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence
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Published:2016-06
Issue:2
Volume:16
Page:255-262
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ISSN:1530-4388
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Container-title:IEEE Transactions on Device and Materials Reliability
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language:
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Short-container-title:IEEE Trans. Device Mater. Relib.
Author:
Liu Ting,Aygun Levent E.,Wagner Sigurd,Sturm James C.
Funder
Princeton Program in Plasma Science and Technology
National Science Foundation
Air Force Office of Scientific Research
Department of Energy
Industrial Technology Research Institute, Taiwan (ITRI)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials