Anomalous Increase in Field-Effect Mobility in In–Ga–Zn–O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7494744/07479455.pdf?arnumber=7479455
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method;Science China Information Sciences;2022-09-05
2. A Direct n+-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors;Micromachines;2022-04-19
3. Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors;Journal of Physics D: Applied Physics;2021-11-04
4. Hydrogen Behavior in Top Gate Amorphous In–Ga–Zn–O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching;IEEE Transactions on Electron Devices;2021-06
5. Improving a-InGaZnO TFTs Reliability by Optimizing Electrode Capping Structure Under Negative Bias Illumination Stress;IEEE Electron Device Letters;2020-08
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