Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111492
Reference14 articles.
1. Dependence of electron channel mobility on Si-SiO/sub 2/ interface microroughness
2. The Si–SiO2 interface: Correlation of atomic structure and electrical properties
3. Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing
4. Electron-energy-loss characterization of the H-terminated Si(111) and Si(100) surfaces obtained by etching in NH4F
5. Interface roughness of short‐period AlAs/GaAs superlattices studied by spectroscopic ellipsometry
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