Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2388889
Reference11 articles.
1. Mechanism for Ohmic contact formation of Ti onn-type GaN investigated using synchrotron radiation photoemission spectroscopy
2. Mössbauer study on structural changes in sputtered Fe‐Al‐Si thin films
3. Atomic geometry and electronic structure of native defects in GaN
4. Defect Donor and Acceptor in GaN
5. The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN
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2. Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate;Electronics;2021-04-03
3. The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation;Microelectronics Reliability;2020-12
4. Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances;Applied Physics A;2020-03-16
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