Analysis of post‐transit photocurrents and electroluminescence spectra froma‐Si:H solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361413
Reference13 articles.
1. Spatially resolved and energy-resolved defect kinetics ina-Si:H: A comprehensive study by phase-shift analysis of modulated photocurrents
2. Study of the density of states of hydrogenated amorphous silicon from time-of-flight and modulated photocurrent experiments
3. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
4. Observation of a novel relaxation process associated with electronic transitions from deep (D) defects in hydrogenated amorphous silicon
5. Space-charge-limited conduction for the determination of the midgap density of states in amorphous silicon: Theory and experiment
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1. Electroluminescence Analysis of Solar Cells and Solar Modules;Advanced Characterization Techniques for Thin Film Solar Cells;2016-07-22
2. Light-induced annealing of hole trap states: A new aspect of light-induced changes in hydrogenated amorphous silicon;Journal of Non-Crystalline Solids;2012-09
3. Electroluminescence Analysis of Solar Cells and Solar Modules;Advanced Characterization Techniques for Thin Film Solar Cells;2011-04-07
4. Transient Photoconductivity Study of the Distribution of Gap States in 100°C VHF-deposited Hydrogenated Silicon Layers;MRS Proceedings;2008
5. Effects of oxygen impurity on the energy distribution of gap states in hydrogenated amorphous silicon studied by post-transit photocurrent spectroscopy;Physical Review B;2007-08-10
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