Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors-Reference-Cited by-同舟云学术

Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

Published:2015-09-28 Issue:12 Volume:118 Page:125702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kizu Takio¹^ORCID,Mitoma Nobuhiko¹,Miyanaga Miki²,Awata Hideaki²,Nabatame Toshihide³,Tsukagoshi Kazuhito¹

Affiliation:

1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Advanced Materials R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan

3. MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4931422

Reference35 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors

2. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

3. Realization of In2O3 thin film transistors through reactive evaporation process