High permittivity quaternary metal (HfTaTiOx) oxide layer as an alternative high-κ gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2347281
Reference15 articles.
1. A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics
2. Mobility Enhancement in TaN Metal-Gate MOSFETs Using Tantalum Incorporated HfO<tex>$_2$</tex>Gate Dielectric
3. Electrical properties of amorphous high-/spl kappa/ HfTaTiO gate dielectric with dielectric constants of 40-60
4. Improved device performance and reliability in high /spl kappa/ HfTaTiO gate dielectric with TaN gate electrode
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