Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2742791
Reference10 articles.
1. Silicides for integrated circuits: TiSi2 CoSi2
2. Oxide mediated epitaxy of CoSi2 on silicon
3. Nitride-mediated epitaxy of CoSi2 on Si(001)
4. Epitaxial Growth of CoSi[sub 2] Layer on a Si(100) Substrate Using a CoN[sub x] Interlayer Deposited by Reactive Sputtering
5. High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
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