Evaluation of device quality germanium‐germanium oxynitride interfaces by high‐resolution transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104123
Reference12 articles.
1. The Oxidation of Germanium Surfaces at Pressures Much Greater Than One Atmosphere
2. D.L.T.S. measurements of a germanium M-I-S interface
3. Growth and Materials Characterization of Native Germanium Oxynitride Thin Films on Germanium
4. Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator
5. p-channel germanium MOSFETs with high channel mobility
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