Si3N4/Si/Ge/GaAs metal‐insulator‐semiconductor structures grown by in situ chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356345
Reference11 articles.
1. Gate-self-aligned p-channel germanium MISFETs
2. Evaluation of device quality germanium‐germanium oxynitride interfaces by high‐resolution transmission electron microscopy
3. p-channel germanium MOSFETs with high channel mobility
4. Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator
5. Inversion layers on germanium with low‐temperature‐deposited aluminum‐phosphorus oxide dielectric films
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