Inversion layers on germanium with low‐temperature‐deposited aluminum‐phosphorus oxide dielectric films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97273
Reference19 articles.
1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
2. Plasma enhanced beam deposition of thin films at low temperatures
3. The germanium insulated-gate field-effect transistor (FET)
4. Dominant Surface Electronic Properties of SiO2‐Passivated Ge Surfaces as a Function of Various Annealing Treatments
5. Stability of Aluminum Oxide Films on Germanium Devices
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1. Investigation of Carrier Transport in Germanium MOSFETs With $\hbox{WN}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{AlN}$ Gate Stacks;IEEE Electron Device Letters;2007-08
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3. Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides;IEEE Transactions on Electron Devices;2006-07
4. Ge n-MOSFETs on lightly doped substrates with high-/spl kappa/ dielectric and TaN gate;IEEE Electron Device Letters;2006-03
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