X-ray diffraction investigation ofn-type porous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1326857
Reference39 articles.
1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
2. The structural and luminescence properties of porous silicon
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4. X‐ray small‐angle scattering analysis of porous silicon layers
5. Characterization of porous silicon layers by grazing- incidence X-ray fluorescence and diffraction
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2. Low mechanical pressure during electrochemical etching: induced modification in optical and structural properties of n-type porous silicon;Journal of Materials Science: Materials in Electronics;2012-05-12
3. Engineering Pseudosubstrates with Porous Silicon Technology;Semiconductor-On-Insulator Materials for Nanoelectronics Applications;2011
4. Electrochemical differential photoacoustic cell to study in situ the growing process of porous materials;Review of Scientific Instruments;2010-01
5. X-ray diffraction study of the morphology and structure of pulse-anodized porous Si multilayers;Crystallography Reports;2008-09
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