An investigation of 10 MeV electron irradiation on silicon NPN transistors-Reference-Cited by-同舟云学术

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An investigation of 10 MeV electron irradiation on silicon NPN transistors

Published:2020 Issue: Volume: Page:
ISSN:0094-243X
Container-title:DAE SOLID STATE PHYSICS SYMPOSIUM 2019
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Author:

Pradeep T. M.,Hegde Vinayakprasanna N.,Pushpa N.,Bhushan K. G.,Kumar Mukesh,Prakash A. P. Gnana

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0016949

Reference4 articles.

1. The effect of ionization and displacement damage on minority carrier lifetime

2. Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy

3. 60Co gamma radiation total ionizing dose combined with conducted electromagnetic interference studies in BJTs

4. Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs

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1. Failure Localization of Bipolar Integrated Circuits by Implementing Active Voltage Contrast;2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2021-09-15

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