Fabrication and characterization of freestanding GaAs∕AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

Fabrication and characterization of freestanding GaAs∕AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

Published:2005-08-29 Issue:9 Volume:87 Page:093109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Noborisaka J.,Motohisa J.,Hara S.,Fukui T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2035332

Reference19 articles.

1. Epitaxial core–shell and core–multishell nanowire heterostructures

2. Size-, shape-, and position-controlled GaAs nano-whiskers

3. Heteroepitaxial metalorganic vapor phase epitaxial growth of InP nanowires on GaP(111)B

4. Controlled Growth of ZnO Nanowires and Their Optical Properties

5. Single-electron transistors in heterostructure nanowires

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