Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
Funder
National Science Foundation
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5111546
Reference39 articles.
1. M. Kneissl , III-Nitride Ultraviolet Emitters ( Springer, 2016), pp. 1–25.
2. Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
3. Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices
4. Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency
5. Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures
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