Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3651335
Reference25 articles.
1. 346 nm Emission from AlGaN Multi-Quantum-Well Light Emitting Diode
2. 250nmAlGaN light-emitting diodes
3. III–Nitride UV Devices
4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
5. Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells on Semipolar and Nonpolar Substrates
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