Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures-Reference-Cited by-同舟云学术

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Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures

Published:2016-12-12 Issue:24 Volume:109 Page:241102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bayerl Dylan¹,Islam SM²,Jones Christina M.³^ORCID,Protasenko Vladimir²,Jena Debdeep²,Kioupakis Emmanouil¹

Affiliation:

1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

2. Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

3. Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

J. Robert Beyster Foundation

National Science Foundation DMREF program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference26 articles.

1. J. Jagger , Introduction to Research in Ultraviolet Photobiology ( Prentice-Hall, Englewood Cliffs, N.J., 1967).

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

4. Nonpolar and Semipolar Group III Nitride-Based Materials

5. Optical anisotropy in [0001]-orientedAlxGa1−xN/AlNquantum wells(x>0.69)

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