Ballistic current in metal-oxide-semiconductor field-effect transistors: The role of device topology
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3197635
Reference10 articles.
1. Ballistic metal‐oxide‐semiconductor field effect transistor
2. The quantum transmitting boundary method
3. Subband decomposition approach for the simulation of quantum electron transport in nanostructures
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