Interface roughness scattering-limited electron mobility in AlAs/GaAs and Ga0.5In0.5P/GaAs wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370752
Reference21 articles.
1. Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the Superlattice
2. Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature
3. Metal insulator transition due to surface roughness scattering in a quantum well
4. Interface roughness scattering in GaAs/AlAs quantum wells
5. Interface roughness scattering in InAs/AlSb quantum wells
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2. Improvement of electron mobility mediated by interface roughness scattering in pseudomorphic GaAs/In0.15Ga0.85As asymmetric double quantum well structure;Materials Today: Proceedings;2023-06
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