Defect studies of electrothermal stress of InP metal‐oxide‐semiconductor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343910
Reference33 articles.
1. Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
2. The effect of interfacial traps on the stability of insulated gate devices on InP
3. Evidence for low surface recombination velocity onn‐type InP
4. Electrical properties of SiO2 and Si3N4 dielectric layers on InP
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