The effect of interfacial traps on the stability of insulated gate devices on InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331695
Reference27 articles.
1. Electrical properties of SiO2 and Si3N4 dielectric layers on InP
2. Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET
3. Inversion layers on InP
4. Microwave gain from an n-channel enhancement-mode InP m.i.s.f.e.t.
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