Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation
Author:
Affiliation:
1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and JST-CREST, K's Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076, Japan
Funder
Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
Japan Science and Technology Agency (JST)
Core Research for Evolutional Science and Technology (CREST)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
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