Stress‐induced leakage current in ultrathin SiO2films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111789
Reference10 articles.
1. High-field-induced degradation in ultra-thin SiO/sub 2/ films
2. Stress-induced oxide leakage
3. Electrical breakdown in thin gate and tunneling oxides
4. Stress voltage polarity dependence of thermally grown thin gate oxide wearout
5. Hole trapping phenomena in the gate insulator of As‐fabricated insulated gate field effect transistors
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