Funder
Ministry of Education of China
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Jiangsu Government
Ministry of Finance of China
Chinese Ministry of Science and Technology
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference62 articles.
1. High Dielectric Constant Materials: VLSI MOSFET Applications;Huff,2006
2. Dielectric breakdown in electrically stressed thin films of thermal SiO2;Harari;J. Appl. Phys.,1978
3. Point defects in HfO2 high K gate oxide;Xiong;Microelectron. Eng.,2005
4. A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics;Chen;Microelectron. Eng.,2004
5. High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics;Xuan;IEDM Tech. Dig,2007
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