Charge trapping and interface state generation in ultrathin stacked Si3N4/SiO2gate dielectrics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349202
Reference16 articles.
1. Hot-carrier memory effect in an Al/SiN/SiO2/Si MNOS diode due to electrical stress
2. Study of carrier trapping in stacked dielectrics
3. Charge transport and trapping characteristics in thin nitride-oxide stacked films
4. Ultrathin oxide‐nitride‐oxide films
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modification of silicon nitride films to oxynitrides by ArF excimer laser irradiation;Surface and Coatings Technology;1996-03
2. Photo-Deposition of oxynitride and nitride films using excimer lamps;Microelectronic Engineering;1994-08
3. Fabrication and characterization of metal-insulator-semiconductor field effect transistors using sputtered silicon nitride film as a gate dielectric;International Journal of Electronics;1994-07
4. MeV ion channeling study of SiNx/Si interfaces formed by various deposition methods;Applied Surface Science;1993-06
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