Fabrication and characterization of metal-insulator-semiconductor field effect transistors using sputtered silicon nitride film as a gate dielectric
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207219408926034
Reference19 articles.
1. Hot-carrier memory effect in an Al/SiN/SiO2/Si MNOS diode due to electrical stress
2. Electron heating in silicon nitride and silicon oxynitride films
3. Avalanche electron injection in 4-nm Si/sub 3/N/sub 4//8-nm SiO/sub 2/ dielectric structure: turn-around phenomenon and Si-SiO/sub 2/ interface degradation
4. The fabrication of metal–oxide–semiconductor transistors using cerium dioxide as a gate oxide material
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Refractive index control of silicon nitride films prepared by radio-frequency reactive sputtering;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002
2. Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering;Journal of Applied Physics;1998-06
3. Electrical properties of ion beam sputtered and ion assisted SiO[sub 2], SiO[sub X]N[sub Y], and SiN[sub X] films on silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-03
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