Electrical properties of ion beam sputtered and ion assisted SiO[sub 2], SiO[sub X]N[sub Y], and SiN[sub X] films on silicon-Reference-Cited by-同舟云学术

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Electrical properties of ion beam sputtered and ion assisted SiO[sub 2], SiO[sub X]N[sub Y], and SiN[sub X] films on silicon

Published:1998-03 Issue:2 Volume:16 Page:589
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lambrinos M. F.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A history of vacuum technology from 5th Century BC and a personal view of progress in the field, including medical applications, from 1959 to 2021;Vacuum;2022-04

2. Ion beam sputter deposition of $$\hbox {SiO}_2$$ thin films using oxygen ions;The European Physical Journal B;2022-03

3. Systematic investigation of the reactive ion beam sputter deposition process of SiO2;The European Physical Journal B;2018-02

4. Electronically Pure Single Chirality Semiconducting Single-Walled Carbon Nanotube for Large Scale Electronic Devices;MRS Advances;2017-01

5. The Effect of Interface States on Single-Walled Carbon Nanotube Transistors;ECS Journal of Solid State Science and Technology;2016

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