Effect of oxygen concentration on the kinetics of thermal donor formation in silicon at temperatures between 350 and 500 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108628
Reference9 articles.
1. Electrical and Optical Properties of Heat-Treated Silicon
2. Mechanism of the Formation of Donor States in Heat-Treated Silicon
3. Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption
4. The Potentials of Infinite Systems of Sources and Numerical Solutions of Problems in Semiconductor Engineering
5. Thermal donor formation and the loss of oxygen from solution in silicon heated at 450 °C
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