CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities-Reference-Cited by-同舟云学术

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CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

Published:2021-09-15 Issue: Volume: Page:
ISSN:
Container-title:2021 International Conference on IC Design and Technology (ICICDT)
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Author:

Yadav Sachin,Cardinael Pieter,Zhao Ming,Vondkar Komal,Peralagu Uthayasankaran,Alian Alireza,Khaled Ahmad,Makovejev Sergej,Ekoga Enrique,Lederer Dimitri,Raskin Jean-Pierre,Parvais Bertrand,Collaert Nadine

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9626390/9626391/09626530.pdf?arnumber=9626530

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates;Applied Physics Letters;2024-08-12

2. Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si;IEEE Transactions on Microwave Theory and Techniques;2023-05

3. A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap;Micromachines;2023-03-29

4. RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si;International Journal of Microwave and Wireless Technologies;2023-03-20

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