Author:
Li Minghao,Liu Yun,Wei Tao,Dai Rongwang,Wang Hao,Xue Zhongying,Wei Xing
Abstract
Abstract
The formation of thermal double donors (TDDs) during the iso-thermal annealing at 450 °C in low-oxygen and high-resistivity silicon was quantitatively investigated, and the oxygen related power parameter
x
for low-oxygen and high-resistivity silicon was obtained. Excessive TDDs formed in the p-type high-resistivity silicon during the device manufacturing process will invert the conductivity to n-type. A quantitative relationship between the critical wafer start resistivity and oxygen concentration in p-type high-resistivity silicon was obtained. The p-type conductivity can be maintained after the device fabrication by controlling the resistivity below the critical resistivity corresponding to the oxygen concentration in p-type high-resistivity silicon.
Funder
National Natural Science Foundation of China
Subject
General Physics and Astronomy,General Engineering