Er3+ photoluminescence from Er-doped amorphous SiOx films prepared by pulsed laser deposition at room temperature: The effects of oxygen concentration-Reference-Cited by-同舟云学术

Er3+ photoluminescence from Er-doped amorphous SiOx films prepared by pulsed laser deposition at room temperature: The effects of oxygen concentration

Published:2003-05-19 Issue:20 Volume:82 Page:3436-3438
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ha Jeong Sook,Bae Chang Hyun,Nam Sang Hwan,Park Seung Min,Jang Young Rae,Yoo Keon Ho,Park Kyoungwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1573335

Reference16 articles.

1. Optical activation and excitation mechanisms of Er implanted in Si

2. Optically active erbium centers in silicon

3. Electroluminescence of erbium–oxygen‐doped silicon diodes grown by molecular beam epitaxy

4. Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation

5. Evolution of the local environment around Er upon thermal annealing in Er and O co-implanted Si

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