Evolution of the local environment around Er upon thermal annealing in Er and O co-implanted Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118678
Reference9 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
3. Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline Si
4. Local structure of 1.54‐μm‐luminescence Er3+implanted in Si
5. Electron paramagnetic resonance of erbium doped silicon
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