Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3292217
Reference15 articles.
1. Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs
2. High mobility NMOSFET structure with high-/spl kappa/ dielectric
3. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
4. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
5. Fermi level pinning by defects in HfO2-metal gate stacks
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