The effect of oxygen during irradiation of silicon with low energy Cs+ ions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3190526
Reference19 articles.
1. Semiconductor profiling with sub-nm resolution: Challenges and solutions
2. Surface cesium concentrations in cesium‐ion‐bombarded elemental and compound targets
3. Transition from tungsten erosion to carbon layer deposition with simultaneous bombardment of tungsten by helium and carbon
4. Depth profiling using C60+ SIMS—Deposition and topography development during bombardment of silicon
5. Cluster induced chemistry at solid surfaces: Molecular dynamics simulations of keV C60 bombardment of Si
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2. Cesium/Xenon dual beam sputtering in a Cameca instrument;Surface and Interface Analysis;2014-09-22
3. Mechanisms of silicon sputtering and cluster formation explained by atomic level simulations;Journal of Mass Spectrometry;2014-02-17
4. Structural Conditions for Cesium Migration to Si(100) Surface Employing Electronic Structure Calculations;The Journal of Physical Chemistry C;2014-02-07
5. Unravelling the secrets of Cs controlled secondary ion formation: Evidence of the dominance of site specific surface chemistry, alloying and ionic bonding;Surface Science Reports;2013-03
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