Depth profiling using C60+ SIMS—Deposition and topography development during bombardment of silicon-Reference-Cited by-同舟云学术

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Depth profiling using C60+ SIMS—Deposition and topography development during bombardment of silicon

Published:2006-07 Issue:19 Volume:252 Page:6521-6525
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Gillen Greg,Batteas James,Michaels Chris A.,Chi Peter,Small John,Windsor Eric,Fahey Albert,Verkouteren Jennifer,Kim K.J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference6 articles.

1. Development of a triplasmatron ion source for the generation of SF5+ and F− primary ion beams on an ion microscope secondary ion mass spectrometry instrument

2. Negative cesium sputter ion source for generating cluster primary ion beams for secondary ion mass spectrometry analysis

3. A. Fahey, P. Chi, G. Gillen, these proceedings.

4. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

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1. Sputtering Yields of Si Bombarded with 10–540-keV C60 Ions;Quantum Beam Science;2022-03-09

2. Deep depth profiling using gas cluster secondary ion mass spectrometry: Micrometer topography development and effects on depth resolution;Surface and Interface Analysis;2021-07-06

3. Hydrogen retention and nitrogen distribution in delta-doped diamond films;Materials Today Communications;2018-12

4. Chemical degradation of selected Zn-based corrosion products induced by C60 cluster, Ar cluster and Ar+ ion sputtering in the focus of X-ray photoelectron spectroscopy (XPS);Applied Surface Science;2017-05

5. On the SIMS Ionization Probability of Organic Molecules;Journal of the American Society for Mass Spectrometry;2017-03-06

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