Author:
Narumi Kazumasa,Naramoto Hiroshi,Yamada Keisuke,Chiba Atsuya,Saitoh Yuichi
Abstract
Sputtering yields of Si have been measured for C60 ions in the energy range from 10 to 540 keV, where the nuclear stopping is dominant, by measuring thickness change of a pre-amorphized layer with conventional Rutherford-backscattering spectroscopy. The measured sputtering yield shows the maximum, which is approximately 600 Si/C60, around 100 keV. Comparing with the sputtering yields for a monatomic ion calculated both based on the linear-collision-cascade theory of Sigmund and using the SRIM2008 code, nonlinear effect on the sputtering yield has been observed. The nonlinear effect depends on the energy of C60 ions: it is very large around the energies where the sputtering yield has the maximum and hardly observed at 10 keV.
Subject
Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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