Current-voltage characteristics of metal-oxide-semiconductor devices containing Ge or Si nanocrystals in thin gate oxides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3190520
Reference43 articles.
1. A silicon nanocrystals based memory
2. Memory properties of Si+ implanted gate oxides: from MOS capacitors to nvSRAM
3. Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
4. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
5. Ion irradiation through SiO2/Si interfaces: Non-conventional fabrication of Si nanocrystals for memory applications
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