Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge0.27 epilayer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4813778
Reference14 articles.
1. Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy
2. Effect of annealing on interface state density of Ni-silicided/Si1−xGex Schottky diode
3. Nickel Germanosilicide Contacts Formed on Heavily Boron Doped<tex>$rm Si_1-xrm Ge_x$</tex>Source/Drain Junctions for Nanoscale CMOS
4. Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
5. Formation of Ni germano-silicide on single crystalline Si/sub 0.3/Ge/sub 0.7//Si
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In‐Situ Observation of the Formation of NiSi/Ni 2 Si Heterojunction in SiGe Nanowire with Al 2 O 3 Diffusion Barrier Layer;Advanced Materials Interfaces;2021-06-25
2. Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers;Microelectronic Engineering;2015-05
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