High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor
Author:
Affiliation:
1. Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
2. R&D Department, Innovation Center, MK-Hdqrs, Yokogawa Electric Corporation, Japan, 2-9-32 Nakacho, Musashino, Tokyo 180-8750, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4967999
Reference23 articles.
1. Black diamond: a new material for active electronic devices
2. Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds
3. C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation
4. Hydrogen-terminated diamond surfaces and interfaces
5. High-temperature, high-voltage operation of pulse-doped diamond MESFET
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