Dynamics of localized excitons in Ga0.69In0.31N0.015As0.985/GaAs quantum well: Experimental studies and Monte-Carlo simulations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4714739
Reference22 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Band Anticrossing in GaInNAs Alloys
3. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
4. Correlation between the optical quality and the Fermi level position in GaInNAs alloys
5. Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
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