Optical properties of a high-quality insulating GaN epilayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124191
Reference13 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Fundamental optical transitions in GaN
3. Acceptor‐bound exciton recombination dynamics in p‐type GaN
4. Pressure‐dependent photoluminescence study of wurtzite GaN
5. Exciton lifetimes in GaN and GaInN
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