MOLECULAR BEAM EPITAXY FOR III-N MATERIALS-Reference-Cited by-同舟云学术

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MOLECULAR BEAM EPITAXY FOR III-N MATERIALS

Published:2006-03 Issue: Volume: Page:117-160
ISSN:
Container-title:III-Nitride Semiconductor Materials
language:
Short-container-title:

Author:

Tang Haipeng¹,Webb James B.²

Affiliation:

1. Institute for Microstructural Science, National Research Council Canada, M-50 Montreal Rd. Ottawa, Canada K1A 0R6, Canada

2. Steacie Institute for Molecular Science, National Research Council Canada, 100 Sussex Drive, Ottawa, Canada K1A 0R6, Canada

Publisher

PUBLISHED BY IMPERIAL COLLEGE PRESS AND DISTRIBUTED BY WORLD SCIENTIFIC PUBLISHING CO.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy;Thin Solid Films;2011-07

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