Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2217160
Reference19 articles.
1. Luminescence of Zn‐ and Cd‐doped GaN
2. Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition
3. Exciton lifetimes in GaN and GaInN
4. Fundamental optical transitions in GaN
5. Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor deposition
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2. Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy;Physical Review B;2016-12-19
3. Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective;Applied Physics Letters;2015-02-09
4. Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy;Physical Review B;2014-06-23
5. Characterization of temperature-dependent photoluminescence properties of InAlGaN quaternary alloys;Journal of Alloys and Compounds;2014-02
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