Ultrathin and highly insulating amorphous-Ta2O5 films formed on Ru/TiN/Ti/n+-Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123380
Reference8 articles.
1. Highly reliable, high-C DRAM storage capacitors with CVD TA/sub 2/O/sub 5/ films on rugged polysilicon
2. Formation and electrical properties of heteroepitaxial SrTiO3/SrVO3−x/Si(100) structures
3. Chemical vapor deposition of (Ba,Sr)TiO3 thin films for application in gigabit scale dynamic random access memories
4. Low voltage performance of Pb(Zr,Ti)O3 capacitors through donor doping
5. Effect of ozone annealing on the dielectric properties of tantalum oxide thin films grown by chemical vapor deposition
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1. Oxide nanolayer improving RRAM operational performance;Microelectronics Journal;2009-03
2. Surface morphology of sputtered Ta2O5thin films on Si substrates from X-ray reflectivity at a fixed angle;Journal of Applied Crystallography;2008-03-08
3. Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors;Microelectronics Reliability;2007-12
4. Effects of Post-Metal Annealing on Electrical Characteristics and Thermal Stability of W[sub 2]N/Ta[sub 2]O[sub 5]/Si MOS Capacitors;Journal of The Electrochemical Society;2004
5. Characteristics of sputter-deposited Ru thin films on Si substrates;Materials Chemistry and Physics;2003-12
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