Chemical vapor deposition of (Ba,Sr)TiO3 thin films for application in gigabit scale dynamic random access memories
Author:
Affiliation:
1. a ULSI Research Laboratories, Research and Development Center, Toshiba Corporation , 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki , 210 , Japan
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584589708019974
Reference8 articles.
1. Step Coverage and Electrical Properties of(Ba,Sr)TiO3Films Prepared by Liquid Source Chemical Vapor Deposition UsingTiO(DPM)2
2. Dielectric breakdown in high-ε films for ULSI DRAMs: II. barium-strontium titanate ceramics
3. RuO2/TiN-Based Storage Electrodes for(Ba,Sr)TiO3Dynamic Random Access Memory Capacitors
4. Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application
5. Chemical Vapor Deposition of ( Ba , Sr ) TiO3
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1. Sub-300 Å (Bax,Sr1-x)TiO3Films by Metal Organic Chemical Vapor Deposition: Nanostructure, Step Coverage, and Dielectric Properties;Japanese Journal of Applied Physics;2001-05-15
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3. Emission Spectroscopic and Mass Spectrometric Characterization of Laser-Ablated Species from a Ferroelectric SrBi2Ta2O9 Target;Applied Spectroscopy;2000-05
4. Adsorption of precursor molecules in the CVD process of (Ba;Sr)titanate simulated by ab-initio calculations;Thin Solid Films;2000-04
5. Surface Reaction Mechanisms in the Chemical Vapor Deposition of (Ba,Sr)TiO3 Films;MRS Proceedings;2000
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