Chemical vapor deposition of (Ba,Sr)TiO3 thin films for application in gigabit scale dynamic random access memories-Reference-Cited by-同舟云学术

Chemical vapor deposition of (Ba,Sr)TiO3 thin films for application in gigabit scale dynamic random access memories

Published:1997-01 Issue:1-4 Volume:14 Page:33-42
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Eguchi Kazuhiro¹,Kiyotoshi Masahiro¹

Affiliation:

1. a ULSI Research Laboratories, Research and Development Center, Toshiba Corporation , 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki , 210 , Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708019974

Reference8 articles.

1. Step Coverage and Electrical Properties of(Ba,Sr)TiO3Films Prepared by Liquid Source Chemical Vapor Deposition UsingTiO(DPM)2

2. Dielectric breakdown in high-ε films for ULSI DRAMs: II. barium-strontium titanate ceramics

3. RuO2/TiN-Based Storage Electrodes for(Ba,Sr)TiO3Dynamic Random Access Memory Capacitors

4. Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application

5. Chemical Vapor Deposition of ( Ba , Sr ) TiO3

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3. Emission Spectroscopic and Mass Spectrometric Characterization of Laser-Ablated Species from a Ferroelectric SrBi2Ta2O9 Target;Applied Spectroscopy;2000-05

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5. Surface Reaction Mechanisms in the Chemical Vapor Deposition of (Ba,Sr)TiO3 Films;MRS Proceedings;2000