Dielectric breakdown in high-ε films for ULSI DRAMs: II. barium-strontium titanate ceramics-Reference-Cited by-同舟云学术

Dielectric breakdown in high-ε films for ULSI DRAMs: II. barium-strontium titanate ceramics

Published:1994-02 Issue:1 Volume:4 Page:61-84
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Scott J. F.¹²³,Azuma M.⁴,Paz de Araujo C. A.²⁵,McMillan L. D.²,Scott M. C.²,Roberts T.²

Affiliation:

1. a Dept. Physics , Univ. Colorado , Boulder, CO, 80309-0390, USA

2. b Symetrix Corp. , 5055 Mark Dabling Blvd., Colorado Springs, CO, 80918, USA

3. e Faculty of Applied Science, Royal Melbourne Institute of Technology , Melbourne, 3001, Victoria, Australia

4. c Matsushita Electronics Co. , Osaka, Japan

5. d Dept. Electrical Engineering , Univ. Colorado , Colorado Springs, CO, 80933-7150, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589408018661

Reference72 articles.

1. Interface Structure and Dielectric Properties of SrTiO3 Thin Film Sputter-Deposited onto Si Substrates

2. Shohata , N. Matsubara , S. Miyasaka , Y. and Yonezawa , M. Proc 6th IEEE Int. Symp. Appl. Ferroelec. Lehigh Univ. 1986. June. pp.580Piscataway, NJ: IEEE.

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