Properties of GaN films deposited on Si(111) by radio-frequency-magnetron sputtering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1368393
Reference38 articles.
1. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
2. Shortest wavelength semiconductor laser diode
3. Characteristics of light‐emitting diodes based on GaNp‐njunctions grown by plasma‐assisted molecular beam epitaxy
4. Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
5. Optical characterization of GaN films by photoreflectance and photocurrent measurement
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