The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1389077
Reference18 articles.
1. Single-electron devices and their applications
2. Critical current uniformity and stability of Nb/Al‐oxide‐Nb Josephson junctions
3. Fabrication of high quality Nb/AlO/sub /x-Al/Nb Josephson junctions. III. Annealing stability of AlO/sub /x tunneling barriers
4. Thermal annealing properties of Nb‐Al/AlOx‐Nb tunnel junctions
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